Product Summary

The 2N5551B011 is an Amplifier Transistor.

Parametrics

2N5551B011 absolute maximum ratings: (1)Collector - Emitter Voltage, VCEO: 140 to 160 Vdc; (2)Collector - Base Voltage, VCBO: 160 to 180 Vdc; (3)Emitter - Base Voltage, VEBO: 6.0 Vdc; (4)Collector Current - Continuous, IC: 600 mAdc; (5)Total Device Dissipation, PD: 625mW; (6)Operating and Storage Junction Temperature Range, TJ, Tstg: -55 to +150℃.

Features

2N5551B011 features: (1)Pb-Free Packages are Available; (2)Device Marking: Device Type.

Diagrams

2N5551B011 circuit diagram

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2N550

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Data Sheet

Negotiable 
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2N5545

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Data Sheet

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Data Sheet

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2N5547
2N5547

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Data Sheet

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Data Sheet

0-1: $0.15
1-25: $0.14
25-100: $0.13
100-250: $0.13
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2N5550_D26Z

Fairchild Semiconductor

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Data Sheet

Negotiable