Product Summary
The 2N5551B011 is an Amplifier Transistor.
Parametrics
2N5551B011 absolute maximum ratings: (1)Collector - Emitter Voltage, VCEO: 140 to 160 Vdc; (2)Collector - Base Voltage, VCBO: 160 to 180 Vdc; (3)Emitter - Base Voltage, VEBO: 6.0 Vdc; (4)Collector Current - Continuous, IC: 600 mAdc; (5)Total Device Dissipation, PD: 625mW; (6)Operating and Storage Junction Temperature Range, TJ, Tstg: -55 to +150℃.
Features
2N5551B011 features: (1)Pb-Free Packages are Available; (2)Device Marking: Device Type.
Diagrams
2N550 |
Other |
Data Sheet |
Negotiable |
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2N5545 |
Other |
Data Sheet |
Negotiable |
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2N5546 |
Other |
Data Sheet |
Negotiable |
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2N5547 |
Other |
Data Sheet |
Negotiable |
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2N5550 |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 160V NPN |
Data Sheet |
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2N5550_D26Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
Negotiable |
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