Product Summary

The IRF4905STRLPBF is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF4905STRLPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF4905STRLPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ -10V: -74 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ -10V: -52 A; (3)IDM Pulsed Drain Current: -260 A; (4)PD @TA = 25℃ Power Dissipation: 3.8 W; (5)PD @TC = 25℃ Power Dissipation: 200 W; (6)Linear Derating Factor: 1.3 W/℃; (7)VGS Gate-to-Source Voltage: ±20 V; (8)EAS Single Pulse Avalanche Energy: 930 mJ; (9)IAR Avalanche Current: -38 A; (10)EAR Repetitive Avalanche Energy: 20 mJ; (11)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (12)TJ Operating Junction and TSTG Storage Temperature Range: -55 to + 175 ℃; (13)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) ℃.

Features

IRF4905STRLPBF features: (1)Advanced Process Technology; (2)Surface Mount; (3)175℃ Operating Temperature; (4)Fast Switching; (5)P-Channel; (6)Fully Avalanche Rated.

Diagrams

IRF4905STRLPBF diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF4905STRLPBF
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Data Sheet
0-1: $2.39
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25-100: $1.21
100-250: $1.16
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