(China (Mainland))
Product Summary
The BSM200GB120DLC is an IGBT-Module.
Parametrics
BSM200GB120DLC maximum rated values: (1)collector-emitter voltage VCES: 1200 V; (2)IC,nom.: 200 A; (3)DC-collector current TC = 25 ℃ IC: 420 A; (4)repetitive peak collector current ICRM: 400 A; (5)total power dissipation Ptot: 1,3 kW; (6)gate-emitter peak voltage VGES: +/- 20V V; (7)DC forward current IF: 200 A; (8)repetitive peak forw. current IFRM: 400 A.
Features
BSM200GB120DLC characteristic values: (1)VCE sat: 2,1 to 2,6 V; (2)collector-emitter saturation voltage: 2,4 V; (3)gate threshold voltage: 4,5 to 6,5 V; (4)input capacitance Cies: 13 nF; (5)ICES: 0,02 to 0,5 mA; (6)collector-emitter cut-off current: 0,5 mA; (7)gate-emitter leakage current IGES: 400 nA.
Diagrams
<IMG border=0 alt="BSM200GB120DLC dimensions" src="http://www.seekic.com/uploadfile/ic-mfg/201283105859572.jpg">
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM200GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 200A DUAL |
Data Sheet |
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BSM200GB120DLC_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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