(China (Mainland))
Product Summary
The WFP50N06 is a Power MOSFET. It is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. The WFP50N06 is well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
WFP50N06 absolute maximum ratings: (1)VDSS Drain to Source Voltage: 60 V; (2)ID Continuous Drain Current(@TC = 25℃): 50 A; Continuous Drain Current(@TC = 100℃): 35 A; (3)IDM Drain Current Pulsed:200 A; (4)VGS Gate to Source Voltage: ±20 V; (5)EAS Single Pulsed Avalanche Energy: 493 mJ; (6)EAR Repetitive Avalanche Energy: 12.0 mJ; (7)dv/dt Peak Diode Recovery dv/dt: 7.0 V/ns; (8)PD Total Power Dissipation(@TC = 25 ℃): 120 W; Derating Factor above 25 ℃: 0.8 W/℃; (9)TSTG, TJ Operating Junction Temperature & Storage Temperature: - 55 ~ 175 ℃; (10)TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.: 300 ℃.
Features
WFP50N06 features: (1)RDS(on) (Max 0.022 Ω )@VGS=10V; (2)Gate Charge (Typical 32nC); (3)Improved dv/dt Capability, High Ruggedness; (4)100% Avalanche Tested; (5)Maximum Junction Temperature Range (175℃).
Diagrams
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Data Sheet |
Negotiable |
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