(China (Mainland))
Product Summary
The 2MBI300U4H-120 is an IGBT module.
Parametrics
2MBI300U4H-120 absolute maximum ratings: (1)Collector-Emitter voltage, VCES: 1200V; (2)Gate-Emitter voltage, VGES: ±20V; (3)Collector Power Dissipation, Pc: 1470W; (4)Junction temperature, Tj: +150℃; (5)Storage temperature, Tstg: -40 to +125℃; (6)Collector current, Ic, Tc=25℃: 400A.
Features
2MBI300U4H-120 features: (1)Zero gate voltage collector current, ICES, VCE=1200V, VGE=0V: 4.0mA; (2)Gate-Emitter leakage current, ICES, VCE=0V, VGE=±20V: 800nA; (3)Gate-Emitter threshold voltage, VGE(th): 4.5 to 8.5V.
Diagrams
<IMG border=0 alt="2MBI300U4H-120 block diagram" src="http://www.seekic.com/uploadfile/ic-mfg/20128311506640.jpg">
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 2MBI300U4H-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100N-060-03 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NB-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NC-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NE-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100P-140 |
Other |
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Data Sheet |
Negotiable |
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2MBI100PC-140 |
Other |
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Data Sheet |
Negotiable |
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