(China (Mainland))
Product Summary
The 2SC3478 is an NPN silicon transistor. It is designed for general-purpose applications requiring high breakdown voltage.
Parametrics
2SC3478 absolute maximum ratings: (1)Storage temperature: -55 to +150 ℃; (2)Junction temperature: 150℃ maximum; (3)Total power dissipation: 750mW; (4)VCBO collector to base voltage: 200V; (5)VCEO collector to emitter voltage: 180/200V; (6)VEBO emitter to base voltage: 5.0V; (7)IC collector current(DC): 100mA; (8)IC collector current(pulse): 200mA; (9)IB base current(DC): 20mA.
Features
2SC3478 features: (1)High breakdown voltage. VCEO=180V/200V; (2)Good hFE linearity.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SC3478/2SC3478A |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2SC3000 |
Other |
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Data Sheet |
Negotiable |
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2SC3011 |
Other |
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Data Sheet |
Negotiable |
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2SC3012 |
Other |
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Data Sheet |
Negotiable |
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2SC3025 |
Other |
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Data Sheet |
Negotiable |
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2SC3026 |
Other |
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Data Sheet |
Negotiable |
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2SC3038 |
Other |
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Data Sheet |
Negotiable |
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